发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 <p>Between an analog circuit area 120 which includes circuits whose characteristics are degraded according to the level of noise contained in an input signal and a digital circuit area 130 which includes circuits that produce noise at such a level that the characteristics of the circuits in the analog circuit area 120 are caused to degrade, a digital circuit area 140 which only includes circuits that produce noise at such a level that the characteristics of the circuits in the analog circuit area 120 are not caused to degrade (or are caused to degrade within their acceptable limits) is located so as to prevent contact between the analog circuit area 120 and the digital circuit area 130.</p>
申请公布号 EP1890328(A1) 申请公布日期 2008.02.20
申请号 EP20060713662 申请日期 2006.02.14
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 KAKEMIZU, TAKASHI;FUKOMOTO, YOSHIHIKO
分类号 H01L27/04;H01L21/822 主分类号 H01L27/04
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