| 摘要 |
A high-density gallium oxide-zinc oxide sintered sputtering target, characterized by containing 20 to 500 massppm of aluminum oxide. A gallium oxide (Ga2O3)-zinc oxide (ZnO) sputtering target (GZO target) is doped with a minute amount of specified element to thereby attain an enhancement of conductivity and target bulk density, namely, improve a component formulation, raise a sintered density and suppress any nodule formation so as to obtain a target capable of preventing any abnormal electric discharge and particle occurrence. Further, there is provided a method of forming a transparent conductive film by the use of the above target, and provided a transparent conductive film formed thereby.
|
