发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 A substrate having an element mounting portion is placed on a suction stage having a suction hole. The suction hole is provided so as to suck a region excluding the element mounting portion of the substrate. Otherwise, the suction hole has a hole size of not less than 0.5 mm nor more than 1.0 mm. A fist semiconduct or substrate is sucked with a suction rubber collet with Shore A hardness of not less than 50 nor more than 70. The first semiconductor element is bonded to the element mounting portion of the substrate. A second semiconductor element having an adhesive layer with a remaining volatile content of 0.5% or less is disposed on the first semiconductor substrate. The adhesive layer is heated to a temperature in a range of not less than 120° C. nor more than 150° C. and bonded.
申请公布号 KR100804856(B1) 申请公布日期 2008.02.20
申请号 KR20070002828 申请日期 2007.01.10
申请人 发明人
分类号 H01L21/60;H01L23/48 主分类号 H01L21/60
代理机构 代理人
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