FABRICATING METHOD OF A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

A method for manufacturing a semiconductor integrated circuit device are provided to prevent an unnecessary pattern from being formed on an etching target layer by reducing the generation of a side robe on a photoresist pattern. A mask layer is formed on an etching target layer(110). A photolithography process using an exposing mask is performed to pattern the mask layer. A sacrificial mask layer(130) is formed on the first mask pattern and the etching target layer. A bake process is performed on the first mask pattern and the sacrificial mask layer. Parts of the sacrificial mask layer and the first mask pattern are removed to form a second mask pattern(122). A separation distance between respective patterns of the second mask pattern is more extended than the first mask pattern. The mask layer is a hydrophobic photoresist. The sacrificial mask layer is a hydrophilic photoresist.