| 摘要 |
In the semiconductor switch of the present invention, the gate electrode, source electrode and drain electrode are formed such that the distance between the gate and the drain of an MESFET, assuming a shunt FET, is longer than the distance between the gate and the drain of an MESFET, assuming a through FET, so that the gate breakdown voltage of the MESFET, assuming a shunt FET, is increased without changing the gate breakdown voltage of the MESFET, assuming a through FET.
|
