| 摘要 |
A method of forming a gate electrode of a semiconductor device includes forming a damascene pattern for fabricating a metal electrode on an upper part of a poly silicon gate so as to prevent a metal electrode from being oxidized when the poly silicon electrode and the metal electrode are formed simultaneously. The method of forming the gate electrode of the semiconductor device includes the steps of forming a gate including poly silicon with a plurality of layers at an upper part of a silicon substrate, forming a spacer on a sidewall of the gate, vapor depositing inter layer dielectric between gates at the upper part of the substrate, forming a damascene pattern to which a metal electrode is formed, and completing the gate electrode including poly silicon and metal by filling the damascene pattern with a predetermined metal and planarizing the metal.
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