发明名称 |
Semiconductor power device with charge compensation structure and monolithic integrated circuit, and method for fabricating it |
摘要 |
The invention relates to a semiconductor power device with charge compensation structure and monolithic integrated circuit, and method for fabricating it. In the case of this semiconductor power device, zones ( 6 ) in charge compensation cells ( 27 ) that are arranged vertically and doped complimentarily to the semiconductor chip volume ( 5 ) are arranged in the entire chip volume, the complimentarily doped zones ( 6 ) extending right into surface regions ( 11 ) of the semiconductor power elements ( 7 ) and not projecting into surface regions ( 12 ) of semiconductor surface elements ( 1 ).
|
申请公布号 |
US7332788(B2) |
申请公布日期 |
2008.02.19 |
申请号 |
US20040927270 |
申请日期 |
2004.08.26 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
AHLERS DIRK;MARION MIGUEL CUADRON;WAHL UWE;WILLMEROTH ARMIN |
分类号 |
H01L29/00;H01L21/336;H01L27/088;H01L29/06;H01L29/76;H01L29/78 |
主分类号 |
H01L29/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|