| 摘要 |
To refine a semiconductor device ( 100 ), in particular a S[ilicon]O[n]I[nsulator] device, comprising: at least one isolating layer ( 10 ) made of a dielectric material; at least one silicon substrate ( 20 ) arranged on said isolating layer ( 10 ); at least one component ( 30 ) integrated in the silicon substrate ( 20 ), which component has at least one slightly doped zone ( 34 ); as well as at least a first, in particular planar, metallization region ( 40 ) arranged between the isolating layer ( 10 ) and the component ( 30 ), in particular between the isolating layer ( 10 ) and the slightly doped zone ( 34 ) of the component ( 30 ), as well as a method of manufacturing at least one semiconductor device ( 100 ) in such a manner that trouble-free operation also of slightly doped components ( 30 ), such as pnp transistors, is guaranteed in a SOI process transferred onto the insulator, it is proposed that at least a second, in particular planar, metallization region ( 42 ) is arranged on the side of the silicon substrate ( 20 ) facing away from the isolating layer ( 10 ), in the area of the component ( 30 ), particularly in the area of the slightly doped zone ( 34 ) of the component ( 30 ).
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