Method of fabricating a Zn-base semiconductor light emitting device

摘要

A p-n junction interface 3 is formed between an n-type ZnTe_1-xO_x (0.5<=x<=1) layer 8 and a p-type ZnTe_1-xO_x (0<=x<0.5) layer 7 , and the n-type ZnTeO layer 8 and/or p-type ZnTeO layer 7 are formed by thermal oxidation of the main surficial side of a p-type ZnTe wafer. This is successful in providing a Zn-base semiconductor light emitting device and a method of fabricating thereof possibly be improved in the emission efficiency at a light emitting layer composed of a Zn-base semiconductor light emitting device.