Simultaneous deposition and etch process for barrier layer formation in microelectronic device interconnects

摘要

The present invention provides a method of forming a interconnect barrier layer 100 . In the method, physical vapor deposition of barrier material 200 is performed within an opening 140 located in a dielectric layer 135 of a substrate 110 . RF plasma etching of the barrier material 200 that is deposited in the opening 140 occurs simultaneously with conducting the physical vapor deposition of the barrier material 200.