| 摘要 |
A static memory device includes at least one memory cell with two cross-coupled CMOS inverters to be connected to first and second voltages. The substrate of the NMOS transistor of a first CMOS inverter is electrically insulated from the substrate of the NMOS transistor of the second CMOS inverter. The two substrates can be biased with the first voltage. A clear flash controller flash clears the cells for temporarily bring the bias of the substrate of the NMOS transistor of the first CMOS inverter to the second voltage.
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