发明名称 |
Method for manufacturing wiring, thin film transistor, light emitting device and liquid crystal display device, and droplet discharge apparatus for forming the same |
摘要 |
As a semiconductor device, specifically, a pixel portion included in a semiconductor device is made to have higher precision and higher aperture ratio, it is required to form a smaller wiring in width. In the case of forming a wiring by using an ink-jet method, a dot spreads on a wiring formation surface, and it is difficult to narrow width of a wiring. In the present invention, a photocatalytic substance typified by TiO<SUB>2 </SUB>is formed on a wiring formation surface, and a wiring is formed by utilizing photocatalytic activity of the photocatalytic substance. According to the present invention, a narrower wiring, that is, a smaller wiring in width than a diameter of a dot formed by an ink-jet method can be formed.
|
申请公布号 |
US7332432(B2) |
申请公布日期 |
2008.02.19 |
申请号 |
US20040946649 |
申请日期 |
2004.09.22 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
NAKAMURA OSAMU;OGINO KIYOFUMI |
分类号 |
G02F1/1368;H01L21/44;B01J35/02;B05D3/00;B05D5/12;C08J7/18;G21H1/00;H01L21/027;H01L21/28;H01L21/288;H01L21/3205;H01L21/336;H01L21/768;H01L27/32;H01L29/786;H01L51/00;H01L51/56 |
主分类号 |
G02F1/1368 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|