| 发明名称 |
Ion bombardment of electrical lapping guides to decrease noise during lapping process |
| 摘要 |
A method for reducing noise in a lapping guide. Selected portions of a magnetoresistive device wafer are bombarded with ions such that a magnetoresistive effect of lapping guides is reduced. The device is lapped, using the lapping guides to measure an extent of the lapping.
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| 申请公布号 |
US7332099(B2) |
申请公布日期 |
2008.02.19 |
| 申请号 |
US20050246727 |
申请日期 |
2005.10.06 |
| 申请人 |
HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B.V. |
发明人 |
CHURCH MARK A.;JAYASEKARA WIPUL PEMSIRI;ZOLLA HOWARD GORDON |
| 分类号 |
G11B5/127;G11B5/39;B24B37/04 |
主分类号 |
G11B5/127 |
| 代理机构 |
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