| 摘要 |
A CMOS image sensor is provided to increase a length margin of a transistor by forming a blooming path structure, thereby reducing the noise and thus improving the quality. Plural photodiodes(PD2n) are arranged on a semiconductor substrate, and plural floating diffusion regions(FDn,FDn+1) are adjacent to the photodiodes. Plural overflow transistors(OGn(a),OGn(b)) are adjacent to the photodiodes, in which (n-1)th and (n)th photodiodes share the floating diffusion region, and (n)th and (n+1)th photodiodes share the overflow transistor. Each of the photodiodes is connected to one transfer transistor(TG2n,TG(2n-1) or TG(2n+1)), and the photodiode is connected to the floating diffusion region via the transfer transistor.
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