发明名称 Magnetoresistive device with lapping guide treated to eliminate magnetoresistive effect thereof
摘要 A method for reducing noise in a lapping guide. Selected portions of a Giant magnetoresistive device wafer are masked, thereby defining masked and unmasked regions of the wafer in which the unmasked regions include lapping guides. The wafer is bombarded with ions such that a Giant magnetoresistive effect of the unmasked regions is reduced. The GMR device is lapped, using the lapping guides to measure an extent of the lapping.
申请公布号 US7333300(B2) 申请公布日期 2008.02.19
申请号 US20040964123 申请日期 2004.10.12
申请人 HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B.V. 发明人 CHURCH MARK A.;JAYASEKARA WIPUL PEMSIRI;ZOLLA HOWARD GORDON
分类号 G11B5/39;B24B37/04;G11B5/31;G11B5/455 主分类号 G11B5/39
代理机构 代理人
主权项
地址