发明名称 |
Article comprising gated field emission structures with centralized nanowires and method for making the same |
摘要 |
This invention provides novel methods of fabricating novel gated field emission structures that include aligned nanowire electron emitters (individually or in small groups) localized in central regions within gate apertures. It also provides novel devices using nanoscale emitters for microwave amplifiers, electron-beam lithography, field emission displays and x-ray sources. The new emission structures are particularly useful in the new devices.
|
申请公布号 |
US7332736(B2) |
申请公布日期 |
2008.02.19 |
申请号 |
US20040014534 |
申请日期 |
2004.12.16 |
申请人 |
SAMSUNG ELECTRONIC CO., LTD |
发明人 |
JIN SUNGHO |
分类号 |
H01L29/06;H01J1/304;H01J3/02;H01J9/00;H01J9/02;H01L;H01L21/00;H01L21/22;H01L21/38 |
主分类号 |
H01L29/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|