发明名称 |
Method for CuO reduction by using two step nitrogen oxygen and reducing plasma treatment |
摘要 |
A method for cleaning a copper interconnect after a chemical-mechanical polishing that comprises: a) treating the surface of said copper interconnect with a nitrogen and oxygen containing treatment; and b) without breaking vacuum, treating the copper interconnect with a NH<SUB>3 </SUB>or H<SUB>2 </SUB>plasma treatment. Next a cap layer is formed over the copper interconnect.
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申请公布号 |
US7332422(B2) |
申请公布日期 |
2008.02.19 |
申请号 |
US20050029881 |
申请日期 |
2005.01.05 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING, LTD. |
发明人 |
LU WEI;GOH LOH NAH LUONA;HSIA LIANG CHOO |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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