发明名称 Magnetoresistive spin valve sensor with tri-layer free layer
摘要 A TMR sensor, a CPP GMR sensor and a CCP CPP GMR sensor all include a tri-layered free layer that is of the form CoFe/CoFeB/NiFe, where the atom percentage of Fe can vary between 5% and 90% and the atom percentage of B can vary between 5% and 30%. The sensors also include SyAP pinned layers which, in the case of the GMR sensors include at least one layer of CoFe laminated onto a thin layer of Cu. In the CCP CPP sensor, a layer of oxidized aluminum containing segregated particles of copper is formed between the spacer layer and the free layer. All three configurations exhibit extremely good values of coercivity, areal resistance, GMR ratio and magnetostriction.
申请公布号 US7333306(B2) 申请公布日期 2008.02.19
申请号 US20050209231 申请日期 2005.08.23
申请人 HEADWAY TECHNOLOGIES, INC. 发明人 ZHAO TONG;ZHANG KUNLIANG;WANG HUI-CHUAN;CHEN YU-HSIA;LI MIN
分类号 G11B5/127;G11B5/33 主分类号 G11B5/127
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