发明名称 GMR sensor having an under-layer treated with nitrogen for increased magnetoresistance
摘要 A magnetoresistive sensor having a substrate that has been treated with nitrogen (nitrogenated). The nitrogenated substrate includes an alumina base layer and a thin top layer of crystalline alumina that has had a very small amount of nitrogen deposited on top. The amount of nitrogen deposited on top of the alumina is less than or equal to two monolayer, and is preferably less than on monolayer. The amount of nitrogen deposited on top of the alumina substrate is not enough to constitute a layer of nitrogen, but affects the structure of the alumina to cause the alumina to have a desired crystalline structure and an extremely smooth surface.
申请公布号 US7333302(B2) 申请公布日期 2008.02.19
申请号 US20070769519 申请日期 2007.06.27
申请人 HITACHI GLOBAL STORAGE TECHNOLOGY NETHERLANDS B.V. 发明人 LEE WEN-YAUNG;SHATZ THOMAS E.;WELIPITIYA DULIP AJANTHA;YORK BRIAN R.
分类号 G11B5/39 主分类号 G11B5/39
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