| 发明名称 |
Composition for forming porous film, porous film and method for forming the same, interlevel insulator film and semiconductor device |
| 摘要 |
According to the invention, the thin film having the thickness controlled desirably can be easily formed using common semiconductor processes. Provided is a coating liquid for forming the porous film having an excellent dielectric property and mechanical property. Specifically, the coating liquid for forming a porous film comprises the condensation product obtained by condensation of one or more silicate compounds represented by the formula (X<SUB>2</SUB>O) <SUB>i</SUB>(SiO<SUB>2</SUB>)<SUB>j</SUB>(H<SUB>2</SUB>O)<SUB>k </SUB>and one more organosilate compounds represented by the formula (X<SUB>2</SUB>O)<SUB>a</SUB>(RSiO<SUB>1.5</SUB>)<SUB>b</SUB>(H<SUB>2</SUB>O)<SUB>c</SUB>. Thus, the porous insulating film having sufficient mechanical strength and dielectric properties for use in the semiconductor manufacturing process can be manufactured.
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| 申请公布号 |
US7332446(B2) |
申请公布日期 |
2008.02.19 |
| 申请号 |
US20040808692 |
申请日期 |
2004.03.25 |
| 申请人 |
SHIN-ETSU CHEMICAL CO., LTD.;MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
OGIHARA TSUTOMU;YAGIHASHI FUJIO;HAMADA YOSHITAKA;ASANO TAKESHI;IWABUCHI MOTOAKI;NAKAGAWA HIDEO;SASAGO MASARU |
| 分类号 |
C08L83/04;H01L21/469;C08G77/04;C09D5/25;C09D183/02;C09D183/04;H01L21/312;H01L21/316;H01L21/768 |
主分类号 |
C08L83/04 |
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