METHOD OF ASHING AN OBJECT AND APPARATUS FOR PERFORMING THE SAME

摘要

A method and apparatus for ashing an object is provided to maintain the electrical reliability of a semiconductor device by removing a hardened photoresist pattern while not removing a polysilicon layer almost. A first reaction gas is converted into plasma(S230), and then the plasma is reacted with a second reaction gas to generate radicals(S250). An object is ashed using the radicals and the plasma(S260). The first reaction gas is converted into the plasma using a microwave, and the step of converting the first reaction gas into the plasma includes converting a nitrogen gas into nitrogen plasma. The second reaction gas includes at least one of a trifluoromethane gas, a chlorine gas, a nitrogen trifluoride gas and a hydrogen bromide gas.