| 摘要 |
A method and an apparatus for examining a wafer and a semiconductor device are provided to easily detect minute cracks and defects generated on a semiconductor chip by using a reflected light having an infrared wavelength. A rear surface of a wafer(2) is encapsulated with a resin layer(7). Infrared rays are irradiated onto the wafer to generate an image based on the reflected light from the wafer so as to detect a crack generated on the wafer. An optical axis(O1) of the infrared rays traverses a surface of the wafer. An irradiating unit emits the infrared rays toward the wafer. An image capture unit received the reflected light from the wafer to create the image. The irradiating unit emits the infrared rays to four lateral sides of the wafer, simultaneously. The irradiating unit includes an infrared polarization filer.
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