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发明名称
Method of fabricating PMOSFET with shallow channel depth and dual gate oxide
摘要
申请公布号
KR100804146(B1)
申请公布日期
2008.02.19
申请号
KR20010088698
申请日期
2001.12.31
申请人
发明人
分类号
H01L21/335;(IPC1-7):H01L21/335
主分类号
H01L21/335
代理机构
代理人
主权项
地址
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