发明名称 SUBSTRATE PROCESSING APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 A substrate processing apparatus comprises a chamber in which a processing space for processing a substrate is defined and which is made of metal, at least one rod-shaped heating body which heats the substrate, and a tube body which houses the heating body and is made of a material different from that of the chamber. The outer diameter on the processing space side of the tube body in a through part in which the tube body passes through the wall of the chamber is set to a dimension smaller than that on the outer side of the chamber of the tube body in the through part.
申请公布号 KR20080015127(A) 申请公布日期 2008.02.18
申请号 KR20077030251 申请日期 2006.11.28
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 YANAGISAWA YOSHIHIKO;TANABE MITSURO
分类号 H01L21/324 主分类号 H01L21/324
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