发明名称 |
SUBSTRATE PROCESSING APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
A substrate processing apparatus comprises a chamber in which a processing space for processing a substrate is defined and which is made of metal, at least one rod-shaped heating body which heats the substrate, and a tube body which houses the heating body and is made of a material different from that of the chamber. The outer diameter on the processing space side of the tube body in a through part in which the tube body passes through the wall of the chamber is set to a dimension smaller than that on the outer side of the chamber of the tube body in the through part.
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申请公布号 |
KR20080015127(A) |
申请公布日期 |
2008.02.18 |
申请号 |
KR20077030251 |
申请日期 |
2006.11.28 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
YANAGISAWA YOSHIHIKO;TANABE MITSURO |
分类号 |
H01L21/324 |
主分类号 |
H01L21/324 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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