发明名称 POLISHING GRAIN AND POLISHING SLURRY USING THE SAME AND METHOD OF MANUFACTURING THE SAME
摘要 A method for preparing an abrasive particle, an abrasive particle prepared by the method, a method for preparing a polishing slurry by using the abrasive particle, and a polishing slurry prepared by the method are provided to increase the size of crystal and to control the growth of abnormal particles generated under the calcination at high temperature. A method for preparing an abrasive particle comprises the steps of (S110) drying a cerium precursor; (S120) filling the dried cerium precursor into a container and sealing it; and (S130) calcining the dried cerium precursor under the sealed state. Preferably the cerium precursor comprises cerium carbonate; the drying is carried out at a temperature lower than the temperature where a crystal starts to grow; and the calcination is carried out at a temperature of 500-900 deg.C.
申请公布号 KR100803729(B1) 申请公布日期 2008.02.18
申请号 KR20060092418 申请日期 2006.09.22
申请人 K.C.TECH CO., LTD.;IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) 发明人 KIM, DONG HYUN;KIM, DAE HYEONG;HONG, SEOK MIN;SUH, MYOUNG WON;KIM, YONG KUK;HWANG, JOON HA;PAIK, UN GYU;PARK, JEA GUN
分类号 C09K3/14;H01L21/304 主分类号 C09K3/14
代理机构 代理人
主权项
地址