发明名称 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
摘要 A plasma processing apparatus is disclosed which enables to conduct a preferable plasma processing while suppressing damage to an object to be processed which is caused by plasma generation. The plasma processing apparatus comprises at least a plasma processing chamber wherein a plasma process is performed on an object to be processed, an object-holding means for placing the object within the plasma processing chamber and a plasma generating means for generating a plasma in the plasma processing chamber, and the plasma generating means can be intermittently supplied with energy.
申请公布号 KR20080015056(A) 申请公布日期 2008.02.15
申请号 KR20087002170 申请日期 2008.01.25
申请人 TOKYO ELECTRON LIMITED 发明人 NOZAWA TOSHIHISA;ISHIBASHI KIYOTAKA;NAKANISHI TOSHIO
分类号 H01J37/32;H01L21/02;H01L21/3065;H01L21/31 主分类号 H01J37/32
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