| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride-based light-emitting device capable of upgrading a light-emission efficiency and reliability of the light-emitting device. <P>SOLUTION: The nitride-based light-emitting device has: a first conductive semiconductor layer; a second conductive semiconductor layer; an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer, the active layer including at least one pair of a quantum well layer and a quantum barrier layer; a first layer arranged in at least either one of the interfaces between the first conductive semiconductor layer and the active layer and between the second conductive semiconductor layer and the active layer, the first layer including a plurality of layers which have differing energy band gaps or thicknesses; and second layers having an energy band gap wider than the first layer has and interposed between respective layers of the first layer. <P>COPYRIGHT: (C)2008,JPO&INPIT |
