| 摘要 |
PROBLEM TO BE SOLVED: To provide a process for fabricating a thin film capacitor having high capacity and a thin profile suitable for embedding and operatable even at high frequency inexpensively with high yield. SOLUTION: The process for fabricating a capacitor comprises a step for forming a noble metal layer (20) on one side of a substrate (10), a step for forming a dielectric layer (30) on the noble metal layer (20), a step for forming a metal foil (40) on the dielectric layer (30), a step for separating the noble metal layer (20) and the dielectric layer (30) on the interface thereof, and a step for forming an electrode layer (50) on the second surface opposite to the first surface of the dielectric layer separated at the separation step and on which the metal foil is formed. COPYRIGHT: (C)2008,JPO&INPIT
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