| 摘要 |
PROBLEM TO BE SOLVED: To provide a field effect transistor (HEMT) using two-dimensional electron gas wherein the stabilization of surface and the improvement in prevention of current collapse are required. SOLUTION: The HEMT is provided with a main semiconductor area (1) including an electron traveling layer (9) and an n-type electron supply layer (10). A source electrode (3), a drain electrode (4), and a gate electrode (5) are formed on one main surface of the main semiconductor area (1). A p-type metal oxide semiconductor layer (7) for surface stabilization is provided on the other main surface (11) of the main semiconductor area (1). COPYRIGHT: (C)2008,JPO&INPIT |
