| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor element having an improved recess channel transistor, and to provide a manufacturing method thereof. <P>SOLUTION: With respect to a semiconductor element and a manufacturing method thereof, the semiconductor element is specifically, designed so that a lower gate electrode in which a three-dimensional recess channel structure is buried, has a laminated structure consisting of a first lower gate conductive layer, a supporting layer that prevents seams from occurring and shifting when the recess channel structure is buried, and a second lower gate conductive layer. By utilizing the characteristic of topology of the three-dimensional recess channel structure, the design minimizes occurrence of seams in the recess channel structure and shift of seams caused by the subsequent thermal treatment process, and can enhance the operating characteristics of the element. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
