发明名称 |
Throughput enhancement for scanned beam ion implanters |
摘要 |
An ion implantation system that optimizes productivity that includes an ion generator configured to implant ions into a workpiece by scanning the ions along an axis in a first direction, a movable stage configured to move the workpiece in a second direction generally orthogonal to the first direction, an ion detection component configured to measure ion dosage at approximately an outer edge of the workpiece, a first direction driver that receives commands from the controller to move in a fast scan speed on wafer or a fast scan speed off wafer and a second direction driver that receives commands from the controller to move the workpiece movable stage in a slow scan speed
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申请公布号 |
US2008035862(A1) |
申请公布日期 |
2008.02.14 |
申请号 |
US20060503685 |
申请日期 |
2006.08.14 |
申请人 |
AXCELIS TECHNOLOGIES, INC. |
发明人 |
EISNER EDWARD C.;VANDERBERG BO H. |
分类号 |
H01J37/302;H01J37/317 |
主分类号 |
H01J37/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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