| 摘要 |
A method for manufacturing a semiconductor substrate includes: (a) forming a protrusion-patterned layer on an epitaxial substrate, the protrusion-patterned layer including a plurality of separated protrusions, each of which includes a top end portion distal from the epitaxial substrate; (b) laterally growing a base layer on the top end portions of the protrusions of the protrusion-patterned layer to a predetermined layer thickness under an epitaxial temperature higher than room temperature in such a manner that each of the top end portions is covered by the base layer and that the base layer cooperates with the protrusions to define a plurality of cavities thereamong; and (c) separating the base layer from the epitaxial substrate by destroying the protrusions of the protrusion-patterned layer.
|
