GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING SAME, AND LAMP

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a group III nitride semiconductor light emitting device wherein variation of peak wavelength is reduced in the plane of a wafer.

SOLUTION: The method is used to manufacture a group III nitride semiconductor light emitting device which emit a light with peak wavelength of 490-550 nm. At least a buffer layer 3 made of a group III nitride semiconductor is formed on a substrate 2 by sputtering method, and a semiconductor lamination structure 1a made of a group III nitride semiconductor including a light emitting area is formed thereon through metal organic chemical vapor-phase deposition (MOCVD).

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