SEMICONDUCTOR DEVICE, AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which solves cross talk problems and to provide its manufacturing method, in relation to a passive matrix element constituted of a memory element and a thin film transistor. SOLUTION: The memory element is equipped with a memory structure having: a pair of electrodes 110 and 113; a layer including an organic compound 112 between the pair of electrodes 110 and 113; and a first layer including a first metal oxide layer 111 and a second layer including a second metal oxide layer 114 between the pair of electrodes 110 and 113. The first metal oxide layer 111 serves as a p-type semiconductor layer and the second metal oxide layer 114 serves as a n-type semiconductor layer. The first layer including the first metal oxide layer 111 and the second layer including the second metal oxide layer 114 form a p-n junction, thereby the memory element is imparted with rectifying capability. COPYRIGHT: (C)2008,JPO&INPIT