| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and equipment for etching an oxide film in which etching rate of the oxide film is controlled under perfect dry environment and silica residues do not remain. SOLUTION: A semiconductor wafer W on which an oxide film is formed is placed in a reaction chamber 2 held under a predetermined temperature of 80-120°C and a predetermined reduced pressure in the range of 12-40 Kpa. Under that state, etching is performed by exposing the semiconductor wafer to reaction gas G produced by diluting anhydrous hydrogen fluoride gas with nitrogen gas at a predetermined mixture ratio. Etching rate is adjusted by the mixture rate of the anhydrous hydrogen fluoride gas and the nitrogen gas. COPYRIGHT: (C)2008,JPO&INPIT
|
