| 摘要 |
PROBLEM TO BE SOLVED: To solve the matter of a conventional method that the recombination rate of minority carriers stored between the diffusion layer of anode and the diffusion layer of cathode cannot be raised. SOLUTION: An interlayer insulating film 20 is formed on a semiconductor substrate 10. An opening 22 (first opening), an opening 24 (second opening) and an opening 26 are formed in the interlayer insulating film 20. The openings 22 and 26 are formed above a P type diffusion layer 16 and an N type diffusion layer 18, respectively. The opening 24 is formed above a spacing region, i.e. the region between the P type diffusion layer 16 and the N type diffusion layer 18. These openings 22, 24 and 26 are filled, respectively, with contact plugs 32, 34 and 36. Dopant of IV valence is implanted in the region of the semiconductor substrate 10 beneath the opening 22 and the region beneath the opening 24. COPYRIGHT: (C)2008,JPO&INPIT
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