| 摘要 |
PROBLEM TO BE SOLVED: To provide a CVD (Chemical Vapor Deposition) film deposition process where a metal film can be deposited by CVD according to oxidation-reduction reaction with sufficient reducibility without passing through a complicated process. SOLUTION: A wafer W is arranged on a susceptor 22 in a chamber 21, and the inside of the chamber 21 is continuously fed with a metal compound gas from a metal compound gas feed section 51 in a gas feed mechanism 50, and with a reducing organic compound gas from a reducing organic compound gas feed section 52 therein, so as to deposit a metal film on the surface of the wafer W. COPYRIGHT: (C)2008,JPO&INPIT
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