| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for cleaning a film-forming apparatus, which can uniformly remove deposits that contain tantalum nitride or tantalum and have deposited on the wall of a treatment chamber of the film-forming apparatus, at a high etching rate without using plasma. SOLUTION: The method for cleaning the film-forming apparatus is directed at removing deposits which contain tantalum nitride or tantalum and have deposited on the wall of the treatment chamber in the film-forming apparatus that has been already used for forming a thin film of tantalum nitride or tantalum, and comprises the steps of: supplying a treatment gas containing fluorine gas into the treatment chamber in the film-forming apparatus; and heating the treatment chamber. COPYRIGHT: (C)2008,JPO&INPIT
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