发明名称 |
METHOD OF FABRICATING SEMICONDUCTOR DEVICES ON A GROUP IV SUBSTRATE WITH CONTROLLED INTERFACE PROPERTIES AND DIFFUSION TAILS |
摘要 |
Electronic and opto-electronic devices having epitaxially-deposited III/V compounds on vicinal group IV substrates and method for making same. The devices include an AlAs nucleating layer on a Ge substrate. The group IV substrate contains a p-n junction whose change of characteristics during epitaxial growth of As-containing layers is minimized by the AlAs nucleating layer. The AlAs nucleating layer provides improved morphology of the devices and a means to control the position of a p-n junction near the surface of the group IV substrate through diffusion of As and/or P and near the bottom of the III/V structure through minimized diffusion of the group IV element.
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申请公布号 |
US2008035939(A1) |
申请公布日期 |
2008.02.14 |
申请号 |
US20070776163 |
申请日期 |
2007.07.11 |
申请人 |
CYRIUM TECHNOLOGIES INCORPORATED |
发明人 |
PUETZ NORBERT;FAFARD SIMON;RIEL BRUNO J. |
分类号 |
H01L21/20;H01L31/0336;H01L33/00 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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