发明名称 |
Passivation of Wide Band-Gap Based Semiconductor Devices with Hydrogen-Free Sputtered Nitrides |
摘要 |
An improved field effect transistor formed in the Group III nitride material system includes a two part structure in which a chemical vapor deposited passivation layer of silicon nitride encapsulates a previously sputtered-deposited layer of silicon nitride. The sputtered layer provides some of the benefits of passivation and the chemical vapor deposited layer provides an excellent environmental barrier.
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申请公布号 |
US2008035934(A1) |
申请公布日期 |
2008.02.14 |
申请号 |
US20070845805 |
申请日期 |
2007.08.28 |
申请人 |
SHEPPARD SCOTT T;SMITH RICHARD P;RING ZOLTAN |
发明人 |
SHEPPARD SCOTT T.;SMITH RICHARD P.;RING ZOLTAN |
分类号 |
H01L29/15 |
主分类号 |
H01L29/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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