发明名称 |
Method of fabricating a capacitor of a memory device |
摘要 |
A capacitor of a memory device, and a method of fabricating the same, includes a lower electrode electrically coupled to a doping region of a transistor structure, the lower electrode having a metal electrode and a metal oxide electrode, a ferroelectric layer covering and extending laterally along the lower electrode, and an upper electrode formed on the ferroelectric layer.
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申请公布号 |
US2008038846(A1) |
申请公布日期 |
2008.02.14 |
申请号 |
US20070878868 |
申请日期 |
2007.07.27 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK YOUNG-SOO;LEE JUNG-HYUN;CHO CHOONG-RAE;KOO JUNE-MO;KIM SUK-PIL;SHIN SANG-MIN |
分类号 |
H01L21/8246;H01L27/105;H01L21/02;H01L27/10;H01L27/115 |
主分类号 |
H01L21/8246 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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