发明名称 SYSTEM AND METHOD TO COMPENSATE FOR CRITICAL DIMENSION NON-UNIFORMITY IN LITHOGRAPHY SYSTEM
摘要 <P>PROBLEM TO BE SOLVED: To provide a system and method to compensate for critical dimension non-uniformity caused by different polarization directions of an illumination beam. <P>SOLUTION: The system comprises an illumination system, a patterning device and a projection system. The illumination system generates an illumination beam of radiation and comprises a source of radiation and an optical system. The source of radiation produces a beam of radiation. The optical system transmits a first portion of the illumination beam having a first polarization direction during a first portion of a cycle and a second portion of the illumination beam having a second polarization direction during a second portion of the cycle. The patterning device includes first and second patterns having respective first and second optical proximity corrections corresponding to the first and second polarization directions. The first and second patterns pattern respective ones of the first and second portions of the illumination beam. The projection system projects the first and second patterned beams onto a target portion of a substrate. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008033329(A) 申请公布日期 2008.02.14
申请号 JP20070195059 申请日期 2007.07.26
申请人 ASML NETHERLANDS BV 发明人 VAN HORSSEN HERMANUS GERARDUS
分类号 G03F7/20;G02B5/30;H01L21/027 主分类号 G03F7/20
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