| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for semiconductor laser elements whereby the semiconductor laser elements having a high kink level are obtained with a high yield. SOLUTION: The manufacturing method for semiconductor laser elements has an array-substrate dividing process. The semiconductor laser array substrate having semiconductor laser element group arranged and formed in the form of a lattice is so divided along the array dividing line groups respectively, in parallel with the X and Y directions of the lattice to form individual semiconductor laser elements. In this method, the semiconductor laser element has such a laser waveguide stripe structure that the laser waveguide stripe width of its laser outgoing end surface is different from the laser waveguide stripe width of its laser reflecting end surface, and its laser waveguide center line does not position on the center line of the semiconductor laser element having a rectangular-plane form. Further, with respect to the shapes of the semiconductor laser element waveguide stripes to be formed in the Y-direction element segment, the semiconductor laser element group are so manufactured that the laser waveguide stripes are made parallel with the X-direction in the form of rotating them by 180°, in the Y-direction element segment adjacent to each other. COPYRIGHT: (C)2008,JPO&INPIT
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