| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor element, where the costs are low and a breakdown voltage in a vertical direction is high. SOLUTION: In the nitride semiconductor element 1, an SOI substrate 2 is provided as a support substrate; an AlN layer 3 is formed on the SOI substrate 2 as a buffer layer; a GaN layer 4 is formed on the AlN layer 3 as a channel layer; an AlGaN layer 5 is formed on the GaN layer 4 as a barrier layer; and a source electrode 6, a drain electrode 7, and a gate electrode 8 are provided on the AlGaN layer 5. The SOI substrate 2 comprises a conductive Si substrate 21, an SiO<SB>2</SB>layer 22, and an Si layer 23, and has insulation properties in its thickness direction. COPYRIGHT: (C)2008,JPO&INPIT
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