| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for reducing the number of masks and the number of masking steps in fabricating a semiconductor device with a self-aligned contact and a local interconnect. SOLUTION: A plurality of transistors are formed in a semiconductor substrate and a first dielectric layer is formed in a way that it covers the semiconductor substrate. To form a first opening which exposes a first transistor part and a second transistor part, the first dielectric layer is selectively etched. A conductive material is deposited within the first opening for define a merged contact between the first and second transistor parts. This merged contact is formed at zero window level to provide a wide landing pad area. COPYRIGHT: (C)2008,JPO&INPIT |
