| 摘要 |
PROBLEM TO BE SOLVED: To provide an efficient Schottky barrier semiconductor device which has little backward leak current, higher blocking voltage, a small forward voltage drop, high power efficiency and has high durability with respect to surge or transient voltage. SOLUTION: A semiconductor layer 102 of low concentration is formed on a first main face of a semiconductor substrate 101, and one or more mesas 102a are formed in the semiconductor layer of low concentration by one or more trenches 103, from a surface of the semiconductor layer in low concentration to the semiconductor substrate 101. An insulating coat 104 is formed in a boundary of the mesa 102a and the trench 103. A first electrode 105 is formed on the surface of the insulating coat 104 and in a trench. A second electrode 106, forming a Shottky junction, is formed on the surface of the semiconductor layer in low concentration by forming ohmic junction with the first electrode 105, and a third electrode 107 is formed on a second main face of the semiconductor substrate 101. COPYRIGHT: (C)2008,JPO&INPIT |
