| 摘要 |
A one time programmable memory including a first memory cell is provided. The first memory cell is disposed on a substrate having a trench disposed therein. The first memory cell includes a floating gate, a select gate, a first doped region, a second doped region and a third doped region. The floating gate is disposed on the sidewall of the trench. The select gate is disposed on the substrate outside the trench. The first doped region is disposed in the substrate at the bottom of the trench. The second and third doped regions are disposed in the substrate on both sides of the trench, and the second doped region is disposed between the floating gate and the select gate.
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