发明名称 Controlled Process and Resulting Device
摘要 A technique for forming a film of material ( 12 ) from a donor substrate ( 10 ). The technique has a step of introducing energetic particles ( 22 ) through a surface of a donor substrate ( 10 ) to a selected depth ( 20 ) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material ( 12 ) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate ( 10 ) at the selected depth ( 20 ), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.
申请公布号 US2008038901(A1) 申请公布日期 2008.02.14
申请号 US20070841970 申请日期 2007.08.20
申请人 发明人 HENLEY FRANCOIS J.;CHEUNG NATHAN W.
分类号 H01L21/30 主分类号 H01L21/30
代理机构 代理人
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