发明名称 Thin film magnetic memory device writing data with bidirectional current
摘要 An end of a selected bit line in a selected column is electrically coupled to an end of a corresponding current return line by one of first and second write column select gates, which are selectively turned on in response to results of column selection. A data write circuit sets the other end of the selected bit line and the other end of the current return line to one and the other of a power supply voltage and a ground voltage in accordance with a level of write data via one of first and second data buses and an inverted data bus, respectively.
申请公布号 US2008037315(A1) 申请公布日期 2008.02.14
申请号 US20070907168 申请日期 2007.10.10
申请人 RENESAS TECHNOLOGY CORP. 发明人 HIDAKA HIDETO
分类号 G11C11/00;G11C11/16 主分类号 G11C11/00
代理机构 代理人
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