| 摘要 |
To eliminate generation of a damaged layer caused by dry etching of a contact layer, occurring in a manufacturing process of a ridge waveguide type semiconductor laser, and to improve reliability and yield thereof, a method is provided involving forming a spacer layer and a damage receptor layer on the contact layer, making the two layer absorb damage caused by dry etching a passivation film in an upper portion of the ridge waveguide structure, and thereafter removing the damaged layer by the dry etching, by selective removal by wet etching.
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